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APT50M60L2VR - POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT50M60L2VR_42314.PDF Datasheet


 Full text search : POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.


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APT50M60L2VFR POWER MOS V 500V 77A 0.060 Ohm
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APT50M60L2VR POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT50M50JLC APT5010JLC POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
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POWER MOS VI 500V 47A 0.100 Ohm
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APT5014LVR POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT50M65JFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 60A 0.065 Ohm
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APT50M75JLL POWER MOS 7 500V 52A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT50M80LLC APT50M80B2LC POWER MOS IV 500V 58A 0.080 Ohm
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APT5014B2LC APT5014LLC APT5014 POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
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